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august 2014 docid025859 rev 2 1/16 STH150N10F7-2 n-channel 100 v, 0.0034 typ., 110 a, stripfet? f7 power mosfet in a h 2 pak-2 package datasheet ? production data figure 1. internal schematic diagram features ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n-channel power mosfet utilizes stripfet? f7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. $0y '7$% * 6 1 3 2 tab h pak-2 2 order code v ds r ds(on)max i d p tot STH150N10F7-2 100 v 0.0039 110 a 250 w table 1. device summary order code marking package packaging STH150N10F7-2 150n10f7 h 2 pak-2 tape and reel www.st.com
contents STH150N10F7-2 2/16 docid025859 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid025859 rev 2 3/16 STH150N10F7-2 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25 c 110 a i d drain current (continuous) at t c = 100 c 110 a i dm (1) 1. pulse width is limited by safe operating area drain current (pulsed) t c = 25 c 440 a p tot total dissipation at t c = 25 c 250 w e as (2) 2. starting t j =25 c, id=30 a, v dd =50 v single pulse avalanche energy 495 mj t j operating junction temperature -55 to 175 c t stg storage temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.6 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 35 c/w
electrical characteristics STH150N10F7-2 4/16 docid025859 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 250 a 100 v i dss zero gate voltage drain current v gs = 0, v ds = 100 v 1 a v gs = 0, v ds = 100 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = +20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 55 a 0.0034 0.0039 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 -8115-pf c oss output capacitance - 1510 - pf c rss reverse transfer capacitance -67-pf q g total gate charge v dd = 50 v, i d =110 a, v gs = 10 v (see figure 14 ) -117-nc q gs gate-source charge - 47 - nc q gd gate-drain charge - 26 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 55 a, r g = 4.7 , v gs = 10 v (see figure 13 ) -33-ns t r rise time - 57 - ns t d(off) turn-off delay time - 72 - ns t f fall time - 33 - ns
docid025859 rev 2 5/16 STH150N10F7-2 electrical characteristics 16 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 110 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 440 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 110 a, v gs = 0 - 1.2 v t rr reverse recovery time i sd = 110 a, di/dt = 100 a/s v dd = 80 v, t j =150 c (see figure 15 ) -70 ns q rr reverse recovery charge - 165 nc i rrm reverse recovery current - 4.7 a
electrical characteristics STH150N10F7-2 6/16 docid025859 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 100 s 0.1 tj=175c tc=25c single pulse 100 am18051v1 single pulse =0.5 0.05 0.02 0.01 0.1 0.2 k 10 t p (s) -4 10 -3 10 -1 10 -5 10 -2 10 -2 10 -1 10 0 c am18052v1 i d 250 150 50 0 0 2 v ds (v) 4 (a) 6 350 400 5v 6v v gs =10v 100 200 300 7v 8v 8 am18042v1 i d 300 200 100 0 0 4 v gs (v) 8 (a) 2 6 50 150 250 v ds =4v am18043v1 v gs 6 4 2 0 0 40 q g (nc) (v) 120 8 80 10 v dd =50v i d =110a 12 am18044v1 r ds(on) 3.380 3.370 3.360 0 20 i d (a) (m ) 3.390 v gs =10v 40 60 3.400 3.410 3.420 80 100 3.430 am18053v1
docid025859 rev 2 7/16 STH150N10F7-2 electrical characteristics 16 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. normalized v ds vs temperature figure 12. source-drain diode forward characteristics c 3000 2000 1000 0 0 40 v ds (v) (pf) 20 60 ciss coss crss 80 100 4000 6000 7000 8000 5000 am18046v1 v gs(th) 0.7 0.6 0.5 0.4 -75 25 t j (c) (norm) 0.8 75 -25 125 i d =250 a 0.9 1 1.1 am18047v1 r ds(on) 1.8 1.2 0.8 0.4 t j (c) (norm) 0.6 1 1.4 1.6 2 -75 25 75 -25 125 am18048v1 i d =55a v ds (norm) 0.96 0.97 0.98 0.99 1 1.01 1.02 1.03 i d =1ma 1.04 -75 25 75 -25 125 t j (c) am18049v1 v sd 0 40 i sd (a) (v) 20 100 60 80 0.3 0.4 0.5 0.6 t j =-55c t j =175c t j =25c 0.7 1 0.8 0.9 am18055v1
test circuits STH150N10F7-2 8/16 docid025859 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid025859 rev 2 9/16 STH150N10F7-2 package mechanical data 16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STH150N10F7-2 10/16 docid025859 rev 2 figure 19. h2pak-2 drawing 8159712_c
docid025859 rev 2 11/16 STH150N10F7-2 package mechanical data 16 table 8. h2pak-2 mechanical data dim. mm min. typ. max. a4.30 - 4.80 a1 0.03 0.20 c1.17 1.37 e4.98 5.18 e0.50 0.90 f0.78 0.85 h 10.00 10.40 h1 7.40 7.80 l 15.30 15.80 l1 1.27 1.40 l2 4.93 5.23 l3 6.85 7.25 l4 1.5 1.7 m2.6 2.9 r0.20 0.60 v0 8
package mechanical data STH150N10F7-2 12/16 docid025859 rev 2 figure 20. h2pak-2 recommended footprint (dimensions are in mm) 8159712_c
docid025859 rev 2 13/16 STH150N10F7-2 packaging mechanical data 16 5 packaging mechanical data table 9. h2pak-2 tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data STH150N10F7-2 14/16 docid025859 rev 2 figure 21. tape figure 22. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius top cover tape am08852v2 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
docid025859 rev 2 15/16 STH150N10F7-2 revision history 16 6 revision history table 10. document revision history date revision changes 31-jan-2014 1 first release. the part number previously included in datasheet docid024552. 20-aug-2014 2 updated title, features and description in cover page. updated figure 3: thermal impedance .
STH150N10F7-2 16/16 docid025859 rev 2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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